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650 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$212.760 |
| 10+ | NT$97.600 |
| 100+ | NT$96.530 |
| 500+ | NT$95.460 |
| 1000+ | NT$94.380 |
價格Each
最少: 1
多項: 1
NT$212.76
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IPP020N08N5AKSA1复制
製造商標準前置時間10 週
訂購代碼2709945
Product RangeOptiMOS 5
其他名稱IPP020N08N5, SP001132480
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id120A
Drain Source On State Resistance2000µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation375W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 5
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 80V OptiMOS™ 5 power transistor
- Ideal for high frequency switching and synchronous rectifier
- Excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS 5
MSL
-
IPP020N08N5AKSA1 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003364