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IPP126N10N3GXKSA1
Power MOSFET, N Channel, 100 V, 58 A, 0.0126 ohm, TO-220, Through Hole
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IPP126N10N3GXKSA1复制
訂購代碼2480856
其他名稱IPP126N10N3 G, SP000683088
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id58A
Drain Source On State Resistance0.0126ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation94W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2023)
IPP126N10N3GXKSA1 的替代選擇
找到 1 個產品
產品總覽
The IPP126N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Halogen-free, Green device
- MSL1 rated 2
應用
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
94W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0126ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.023587