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IPP60R165CPXKSA1
Power MOSFET, N Channel, 600 V, 21 A, 0.15 ohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$175.590 |
| 10+ | NT$115.120 |
| 100+ | NT$85.700 |
| 500+ | NT$71.470 |
| 1000+ | NT$66.620 |
價格Each
最少: 1
多項: 1
NT$175.59
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IPP60R165CPXKSA1复制
製造商標準前置時間18 週
訂購代碼2480718
其他名稱IPP60R165CP, SP000084279
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id21A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IPP60R165CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Very fast switching
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
應用
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
技術規格
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
IPP60R165CPXKSA1 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002008