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| 數量 | 價格 |
|---|---|
| 5+ | NT$122.890 |
| 50+ | NT$105.640 |
| 100+ | NT$88.380 |
| 500+ | NT$86.450 |
| 1000+ | NT$84.730 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$614.45
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IPT012N08N5ATMA1
訂購代碼2617417
Product RangeOptiMOS 5
其他名稱IPT012N08N5, SP001227054
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id300A
Drain Source On State Resistance1200µohm
Transistor Case StylePG-HSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 5
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
IPT012N08N5ATMA1 is a 80V, 400A OptiMOSTM 5power-transistor in 8 pin HSOF package. Ideal for high frequency switching and synchronous rectification.
- Excellent gate charge x RDS(on)product(FOM)
- Very low on-resistance RDS(on) of 1.2mohm
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
300A
Transistor Case Style
PG-HSOF
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
1200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS 5
MSL
MSL 1 - Unlimited
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000953