IPT020N10N3ATMA1

The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

• Industry‘s lowest R DS(on)
• Highest current capability up to 300A
• Very low package parasitic and inductances
• Less paralleling and cooling required
• Highest system reliability
• Enabling very compact design
• Normal level
• Excellent gate charge x RDS (ON) product (FOM)
• Extremely low ON-resistance RDS (ON)
• High current capability
• Qualified according to JEDEC for target application
• Halogen-free, Green device

應用

Power Management, Communications & Networking, Lighting, Automotive