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製造商INFINEON
製造商產品編號IPW60R017C7XKSA1复制
製造商標準前置時間52 週
訂購代碼2839474
Product RangeCoolMOS C7
其他名稱IPW60R017C7, SP001313542
您的零件号
179 有存貨
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179 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$791.890 |
| 5+ | NT$691.600 |
| 10+ | NT$591.300 |
| 50+ | NT$551.460 |
| 100+ | NT$511.610 |
| 250+ | NT$483.920 |
價格Each
最少: 1
多項: 1
NT$791.89
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IPW60R017C7XKSA1复制
製造商標準前置時間52 週
訂購代碼2839474
Product RangeCoolMOS C7
其他名稱IPW60R017C7, SP001313542
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id109A
Drain Source On State Resistance0.017ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation446W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Increased efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
- Best in class RDS(on)/package
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching losses
- Increased power density solutions due to smaller packages
- Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg
技術規格
Channel Type
N Channel
Continuous Drain Current Id
109A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
446W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
-
技術文件 (1)
IPW60R017C7XKSA1 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.009072
