IR2011PBF

IR2011PBF is a high power, high speed power MOSFET driver with independent high and low side referenced output channels. Logic input is compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delay is matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high-side configuration which operates up to 200V. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The application includes converters and DC motor drive.

• Floating channel designed for bootstrap operation, fully operational to 200V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V, turn-on and off delay matching is 20ns max (TA=25°C)
• Independent low and high side channels, input logic HIN/LIN active high
• Undervoltage lockout for both channels, 3.3V and 5V logic compatible
• CMOS Schmitt-triggered inputs with pull-down, matched propagation delay for both channels
• 200V high side floating supply offset voltage, 75ns turn-off propagation delay typ(VS=200V, TA=25°C)
• Output high and low short circuit pulsed current is 1.0A typ (VO=0V/15V, PW ≤ 10μs, TA=25°C)
• Low side fixed supply voltage range from 10 to 20V, turn-on propagation delay is 80ns typ (TA=25°C)
• PDIP8 package, ambient temperature range from -40 to 125°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.