
產品訊息
產品總覽
The IR21814SPBF is a high voltage high speed power MOSFET and IGBT Driver with an independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4/1.8A
應用
Power Management, Industrial
技術規格
2Channels
High Side and Low Side
14Pins
Surface Mount
1.9A
10V
-40°C
180ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (23-Jan-2024)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
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