
3,800 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 1+ | NT$147.060 |
| 10+ | NT$111.940 |
| 25+ | NT$93.890 |
| 50+ | NT$92.090 |
| 100+ | NT$90.280 |
| 250+ | NT$83.710 |
| 500+ | NT$78.130 |
| 1000+ | NT$71.900 |
產品訊息
產品總覽
The IR2181SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Lower DI/DT gate driver for better noise immunity
- Logic and power ground ±5V offset
應用
Industrial, Consumer Electronics, Alternative Energy, Power Management
技術規格
2Channels
High Side and Low Side
8Pins
Surface Mount
1.9A
10V
-40°C
180ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (25-Jun-2025)
技術文件 (1)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
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