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IRF1404ZPBF
Power MOSFET, N Channel, 40 V, 190 A, 3700 µohm, TO-220AB, Through Hole
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948 有存貨
1,000 即日起您可預購補貨
948 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$87.980 |
| 10+ | NT$47.170 |
| 100+ | NT$37.780 |
| 500+ | NT$37.030 |
| 1000+ | NT$36.270 |
| 5000+ | NT$35.520 |
價格Each
最少: 1
多項: 1
NT$87.98
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF1404ZPBF复制
製造商標準前置時間54 週
訂購代碼8657394
其他名稱SP001574476
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id190A
Drain Source On State Resistance3700µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation220W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Advanced process technology
- Ultra low on-resistance
- Repetitive avalanche allowed up to Tjmax
- 175°C Operating temperature
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
190A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
220W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
3700µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001814