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IRF1405PBF
Power MOSFET, N Channel, 55 V, 169 A, 5300 µohm, TO-220AB, Through Hole
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1,762 有存貨
1,000 即日起您可預購補貨
1,762 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$105.760 |
| 10+ | NT$52.500 |
| 100+ | NT$46.760 |
| 500+ | NT$37.750 |
| 1000+ | NT$37.450 |
| 5000+ | NT$32.880 |
價格Each
最少: 1
多項: 1
NT$105.76
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF1405PBF复制
製造商標準前置時間28 週
訂購代碼8648026
其他名稱SP001574466
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id169A
Drain Source On State Resistance5300µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF1405PBF is a 55V N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Suitable for anti-lock braking system, electric power steering, wiper control and climate control applications.
- 175°C Operating temperature
- Repetitive avalanche allowed up to Tjmax
- Dynamic dV/dt rating
應用
Automotive
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
169A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
5300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002041