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產品訊息
製造商INFINEON
製造商產品編號IRF250复制
訂購代碼664080
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id30A
Drain Source On State Resistance0.09ohm
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
IRF250 的替代選擇
找到 1 個產品
產品總覽
The IRF250 is a 200V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse energy and diode recovery dv/dt capability using Hi-Rel technology.
- Simple drive requirement
- Repetitive avalanche rating
- Easy to parallel
應用
Power Management, Motor Drive & Control, Audio, Aerospace, Defence, Military
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-204AA
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:否
符合 RoHS 鄰苯二甲酸酯類規定:否
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤):.011793

