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IRF2804PBF
Power MOSFET, N Channel, 40 V, 280 A, 2300 µohm, TO-220AB, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$79.870 |
| 10+ | NT$41.720 |
| 100+ | NT$37.190 |
| 500+ | NT$36.540 |
| 1000+ | NT$35.880 |
價格Each
最少: 1
多項: 1
NT$79.87
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF2804PBF复制
製造商標準前置時間54 週
訂購代碼8657491
其他名稱SP001571174
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id280A
Drain Source On State Resistance2300µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
- Advanced process technology
- Ultra-low ON-resistance
- Fast switching
- Repetitive avalanche allowed up to Tjmax
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
280A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRF2804PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002