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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$77.020 | NT$77.02 |
| 總計 價格 | NT$77.02 | ||
| 數量 | 價格 |
|---|---|
| 1+ | NT$77.020 |
| 10+ | NT$49.060 |
| 100+ | NT$32.880 |
| 500+ | NT$25.410 |
| 1000+ | NT$25.160 |
| 5000+ | NT$25.150 |
產品訊息
產品總覽
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
應用
Power Management
技術規格
N Channel
17A
TO-263 (D2PAK)
10V
70W
175°C
-
No SVHC (25-Jun-2025)
100V
0.09ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
技術文件 (1)
IRF530NSTRLPBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
