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IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
圖片僅供舉例說明。 請參閱產品描述。
8,080 有存貨
16,000 即日起您可預購補貨
90 件可于 1-2 個工作日後配送(新加坡 件庫存)
7,990 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$59.390 | NT$59.39 |
| 總計 價格 | NT$59.39 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$59.390 |
| 10+ | NT$37.060 |
| 100+ | NT$28.600 |
| 500+ | NT$22.580 |
| 1000+ | NT$19.170 |
| 5000+ | NT$18.790 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRF7342TRPBF复制
製造商標準前置時間28 週
訂購代碼
複捲式2468016RL
條帶式包裝2468016
其他名稱SP001566208
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel3.4A
Drain Source On State Resistance N Channel0.095ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
3.4A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.095ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
IRF7342TRPBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000169