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IRF7420PBF
Power MOSFET, P Channel, 12 V, 11.5 A, 0.014 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7420PBF复制
訂購代碼9103473
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id11.5A
Drain Source On State Resistance0.014ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The IRF7420PBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering technique.
- Industry standard pin-out
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
11.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
8Pins
Product Range
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.0005