列印頁面
IRF7473PBF
Power MOSFET, N Channel, 100 V, 6.9 A, 0.026 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7473PBF复制
訂購代碼9102884
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.9A
Drain Source On State Resistance0.026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRF7473PBF 的替代選擇
找到 1 個產品
產品總覽
The IRF7473PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for telecom and data-com 24 and 48V input DC-to-DC converter.
- Ultra-low ON-resistance
- High speed switching
- Low gate drive current due to improved gate charge characteristic
- Improved avalanche ruggedness and dynamic dV/dt
- Industry standard pin-out
應用
Power Management, Motor Drive & Control, Communications & Networking
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5.5V
No. of Pins
8Pins
Product Range
-
技術文件 (1)
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.031751