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IRF7821PBF
Power MOSFET, N Channel, 30 V, 13.6 A, 9100 µohm, SOIC, Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRF7821PBF复制
訂購代碼1013495
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id13.6A
Drain Source On State Resistance9100µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max155°C
Product Range-
Qualification-
IRF7821PBF 的替代選擇
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產品總覽
The IRF7821PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
- Low gate charge
- Ultra-low gate impedance
- Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
應用
Computers & Computer Peripherals, Communications & Networking, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
13.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
155°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000158