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IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.8 A, 6.8 A, 0.022 ohm
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產品訊息
製造商INFINEON
製造商產品編號IRF9389TRPBF复制
訂購代碼2579952
Product RangeHEXFET Series
其他名稱SP001551666
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.8A
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.022ohm
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
IRF9389TRPBF 的替代選擇
找到 1 個產品
產品總覽
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance P Channel
0.022ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6.8A
Drain Source On State Resistance N Channel
0.022ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.0001