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IRF9540NPBF
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$53.090 |
| 10+ | NT$26.300 |
| 100+ | NT$22.500 |
| 500+ | NT$19.450 |
| 1000+ | NT$19.360 |
價格Each
最少: 1
多項: 1
NT$53.09
品項附註
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產品訊息
製造商INFINEON
製造商產品編號IRF9540NPBF
訂購代碼8648620
Product RangeHEXFET Series
其他名稱SP001560174
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id23A
Drain Source On State Resistance0.117ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is -100V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 117mohm at Vgs of -10V
- Power dissipation Pd of 140W at 25°C
- Continuous drain current Id of -23A at Vgs -10V and 25°C
- Operating junction temperature range from -55°C to 175°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
23A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.117ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.002041