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| 數量 | 價格 |
|---|---|
| 1+ | NT$75.440 |
| 10+ | NT$57.430 |
| 100+ | NT$45.430 |
| 500+ | NT$41.840 |
| 1000+ | NT$39.790 |
價格Each
最少: 1
多項: 1
NT$75.44
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFB3407ZPBF复制
製造商標準前置時間14 週
訂購代碼2839487
Product RangeHEXFET
其他名稱IRFB3407ZPBF, SP001560202
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance6400µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation230W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
IRFB3407ZPBF 的替代選擇
找到 3 個產品
產品總覽
HEXFET® power MOSFET suitable for use in battery management, high speed power switching and hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
230W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
6400µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002801