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IRFB4110PBF
Power MOSFET, N Channel, 100 V, 180 A, 4500 µohm, TO-220AB, Through Hole
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1,216 有存貨
8,000 即日起您可預購補貨
1,216 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$111.130 |
| 10+ | NT$58.630 |
| 100+ | NT$52.880 |
| 500+ | NT$49.820 |
| 1000+ | NT$43.310 |
價格Each
最少: 1
多項: 1
NT$111.13
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFB4110PBF复制
製造商標準前置時間52 週
訂購代碼1436955
其他名稱SP001570598
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance4500µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation370W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
180A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
370W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
4500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRFB4110PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002041