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1,244 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$70.500 |
| 10+ | NT$34.600 |
| 100+ | NT$29.980 |
| 500+ | NT$24.070 |
| 1000+ | NT$20.540 |
| 5000+ | NT$20.130 |
價格Each
最少: 1
多項: 1
NT$70.50
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFB7446PBF复制
製造商標準前置時間22 週
訂購代碼2253788
其他名稱SP001577760
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id120A
Drain Source On State Resistance3300µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation99W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFB7446PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
應用
Motor Drive & Control, Power Management, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
99W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
IRFB7446PBF 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000068
