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IRFH4253DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 1100 µohm
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製造商INFINEON
製造商產品編號IRFH4253DTRPBF复制
訂購代碼
複捲式2577150RL
條帶式包裝2577150
Product RangeFastIRFET HEXFET Series
其他名稱SP001556246
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產品訊息
製造商INFINEON
製造商產品編號IRFH4253DTRPBF复制
訂購代碼
複捲式2577150RL
條帶式包裝2577150
Product RangeFastIRFET HEXFET Series
其他名稱SP001556246
技術資料表
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel145A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1100µohm
Drain Source On State Resistance P Channel-
Transistor Case StyleQFN
No. of Pins10Pins
Power Dissipation N Channel50W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
產品總覽
IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package, increased power density
- Low charge control MOSFET (10nC typical), lower switching losses
- Low RDSON synchronous MOSFET (<lt/>1.45mohm), lower conduction losses
- Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
- Environmentally friendlier, industrial qualification, increased reliability
- Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
- Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
- Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
- Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
- Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C
技術規格
Channel Type
N Channel + Schottky
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
10Pins
Power Dissipation P Channel
-
Product Range
FastIRFET HEXFET Series
MSL
MSL 2 - 1 year
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
145A
Drain Source On State Resistance N Channel
1100µohm
Transistor Case Style
QFN
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.0001