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IRFP1405PBF
Power MOSFET, N Channel, 55 V, 160 A, 5300 µohm, TO-247AC, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$111.720 |
| 10+ | NT$56.020 |
| 100+ | NT$51.320 |
價格Each
最少: 1
多項: 1
NT$111.72
品項附註
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產品訊息
製造商INFINEON
製造商產品編號IRFP1405PBF复制
製造商標準前置時間28 週
訂購代碼8658382
其他名稱SP001572614
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id160A
Drain Source On State Resistance5300µohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFP1405PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
應用
Automotive, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
160A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
5300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.009979