列印頁面
IRFP3077PBF
Power MOSFET, N Channel, 75 V, 120 A, 3300 µohm, TO-247AC, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFP3077PBF复制
訂購代碼1602241
其他名稱SP001566982
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance3300µohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation340W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The IRFP3077PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
20V
Power Dissipation
340W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005