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IRFP360PBF
Power MOSFET, N Channel, 400 V, 23 A, 0.2 ohm, TO-247AC, Through Hole
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產品訊息
製造商INFINEON
製造商產品編號IRFP360PBF复制
訂購代碼1653668
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id23A
Drain Source On State Resistance0.2ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRFP360PBF 的替代選擇
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產品總覽
The IRFP360PBF is a HEXFET® third generation N-channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distance between pins to meet the requirements of most safety specifications.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
應用
Power Management, Commercial, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
400V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.18