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產品訊息
製造商INFINEON
製造商產品編號IRFP4868PBF复制
訂購代碼2456713
其他名稱SP001556792
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id70A
Drain Source On State Resistance0.032ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation517W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
產品總覽
Single N-channel StrongIRFET™ power MOSFET. The device is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High-current rating
- High power density
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
70A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
517W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Mexico
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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產品合規憑證
重量 (公斤):.007862
