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IRFR3806PBF
Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-252 (DPAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFR3806PBF复制
訂購代碼1602231
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id43A
Drain Source On State Resistance0.0126ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
IRFR3806PBF 的替代選擇
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產品總覽
The IRFR3806PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
43A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
20V
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0126ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000686