列印頁面
IRFR4510TRPBF
Power MOSFET, N Channel, 100 V, 56 A, 0.0139 ohm, TO-252AA, Surface Mount
1,385 有存貨
需要更多？
1,381 件可于 1-2 個工作日後配送(新加坡 件庫存)
4 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$69.900 |
| 10+ | NT$45.060 |
| 100+ | NT$36.450 |
| 500+ | NT$27.040 |
| 1000+ | NT$22.520 |
價格Each
最少: 1
多項: 1
NT$69.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFR4510TRPBF复制
製造商標準前置時間20 週
訂購代碼2253795
其他名稱SP001567870
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id56A
Drain Source On State Resistance0.0139ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation143W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
產品總覽
100V Single N-Channel HEXFET® power MOSFET suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
56A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
143W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0139ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000895