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IRFR9024NPBF
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252 (DPAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFR9024NPBF复制
訂購代碼8649863
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id11A
Drain Source On State Resistance0.175ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Dec-2015)
IRFR9024NPBF 的替代選擇
找到 3 個產品
產品總覽
The IRFR9024NPBF is a P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Advanced process technology
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.175ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (17-Dec-2015)
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產品合規憑證
重量 (公斤)：.000635