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IRFR9120NPBF
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFR9120NPBF复制
訂購代碼8649880
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.48ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2023)
IRFR9120NPBF 的替代選擇
找到 1 個產品
產品總覽
The IRFR9120NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6.6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.48ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.000641