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IRFS3206PBF
Power MOSFET, N Channel, 60 V, 210 A, 3000 µohm, TO-263 (D2PAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFS3206PBF复制
訂購代碼1436973
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id210A
Drain Source On State Resistance3000µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRFS3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Halogen-free
應用
Power Management, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
210A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.002434