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IRFS38N20DPBF
Power MOSFET, N Channel, 200 V, 44 A, 0.054 ohm, TO-263 (D2PAK), Surface Mount
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRFS38N20DPBF复制
訂購代碼8658889
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id44A
Drain Source On State Resistance0.054ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
IRFS38N20DPBF 的替代選擇
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產品總覽
The IRFS38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
- Fully characterized avalanche voltage and current
- Low gate-to-drain charge to reduce switching losses
應用
Power Management, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
44A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
320W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.054ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.0018