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IRFS4229PBF
Power MOSFET, N Channel, 250 V, 45 A, 0.048 ohm, TO-263 (D2PAK), Surface Mount
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產品訊息
製造商INFINEON
製造商產品編號IRFS4229PBF复制
訂購代碼1436978
其他名稱SP001576214
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id45A
Drain Source On State Resistance0.048ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRFS4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
應用
Power Management, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
45A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.002359