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產品訊息
製造商INFINEON
製造商產品編號IRFS4321PBF复制
訂購代碼1436980
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id83A
Drain Source On State Resistance0.015ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRFS4321PBF is a HEXFET® single N-channel Power MOSFET offers low gate charge improves the switching performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Low RDS (ON) reduces losses
- Improved diode recovery improves switching and EMI performance
- Fully characterized avalanche SOA
- 30V Gate voltage rating improves robustness
應用
Automation & Process Control, Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
83A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤):.002703

