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IRFU9024NPBF
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$53.030 |
| 10+ | NT$32.340 |
| 100+ | NT$24.780 |
| 500+ | NT$19.480 |
| 1000+ | NT$15.080 |
| 5000+ | NT$12.910 |
價格Each
最少: 1
多項: 1
NT$53.03
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFU9024NPBF复制
製造商標準前置時間42 週
訂購代碼8650101
其他名稱SP001557756
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id11A
Drain Source On State Resistance0.175ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.175ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000454