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IRFZ44NPBF
MOSFET, N, 55V, 41A, TO-220
圖片僅供舉例說明。 請參閱產品描述。
8,469 有存貨
10,000 即日起您可預購補貨
4140 件可于 1-2 個工作日後配送(新加坡 件庫存)
4329 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$45.490 |
| 10+ | NT$21.140 |
| 100+ | NT$19.010 |
| 500+ | NT$14.910 |
| 1000+ | NT$11.520 |
| 5000+ | NT$11.200 |
價格Each
最少: 1
多項: 1
NT$45.49
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRFZ44NPBF
訂購代碼8650225
Product RangeHEXFET Series
其他名稱SP001565354
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id41A
Drain Source On State Resistance0.0175ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation94W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Advanced process technology
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
41A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
94W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0175ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
IRFZ44NPBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002