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IRG4BH20K-SPBF
IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263 (D2PAK), 3 Pins
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產品訊息
製造商INFINEON
製造商產品編號IRG4BH20K-SPBF复制
訂購代碼1298569
Product RangeIRG4
技術資料表
Continuous Collector Current11A
Collector Emitter Saturation Voltage3.17V
Power Dissipation60W
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product RangeIRG4
產品總覽
The IRG4BH20K-SPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
- High short-circuit rating
- Latest generation 4 IGBT's offer highest power density motor controls possible
應用
Consumer Electronics, Motor Drive & Control, Power Management
技術規格
Continuous Collector Current
11A
Power Dissipation
60W
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Collector Emitter Saturation Voltage
3.17V
Transistor Case Style
TO-263 (D2PAK)
Operating Temperature Max
150°C
Product Range
IRG4
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.00143