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IRG4IBC20WPBF
IGBT, 11.8 A, 2.16 V, 34 W, 600 V, TO-220FP, 3 Pins
不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4IBC20WPBF复制
訂購代碼8650454
技術資料表
Continuous Collector Current11.8A
Collector Emitter Saturation Voltage2.16V
Power Dissipation34W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220FP
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
產品總覽
The IRG4IBC20WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to <gt/>300kHz).
- Industry-benchmark switching losses improve efficiency of all power supply topologies
- 50% Reduction of Eoff parameter
- Low IGBT conduction losses
- Particular benefit to single-ended converters and boost PFC topologies 150W and higher
應用
HVAC, Consumer Electronics, Power Management
技術規格
Continuous Collector Current
11.8A
Power Dissipation
34W
Transistor Case Style
TO-220FP
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.16V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.002