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IRG4PH30KDPBF
IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 Pins
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The IRG4PH30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
- Combines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
- Latest generation 4 IGBTs offer highest power density motor controls possible
應用
Motor Drive & Control, Alternative Energy, Power Management
技術規格
Continuous Collector Current
20A
Power Dissipation
100W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
3.1V
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
IRG4
技術文件 (1)
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原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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重量 (公斤)：.00567