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IRG4PSC71KDPBF
IGBT, 85 A, 2.3 V, 350 W, 600 V, TO-274AA, 3 Pins
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4PSC71KDPBF
訂購代碼8650748
其他名稱SP001544764
技術資料表
Continuous Collector Current85A
Collector Emitter Saturation Voltage2.3V
Power Dissipation350W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-274AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
IRG4PSC71KDPBF 的替代選擇
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產品總覽
The IRG4PSC71KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diode optimized for operation with IGBT, to minimize EMI, noise and switching losses.
- Hole-less clip/pressure mount package
- High abort circuit rating IGBTs
- Minimum switching losses combined with low conduction losses
- Tightest parameter distribution
- IGBT co-packaged with ultrafast soft recovery anti-parallel diode
- Creepage distance increased to 5.35mm
- High current rating co-pack IGBT
- Maximum power density
應用
Alternative Energy, Power Management, Maintenance & Repair, Motor Drive & Control
技術規格
Continuous Collector Current
85A
Power Dissipation
350W
Transistor Case Style
TO-274AA
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.3V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.006