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IRG4PSC71UDPBF
IGBT, 85 A, 1.95 V, 350 W, 600 V, TO-274AA, 3 Pins
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRG4PSC71UDPBF
訂購代碼8650764
Product RangeIRG4
其他名稱SP001545818
技術資料表
Continuous Collector Current85A
Collector Emitter Saturation Voltage1.95V
Power Dissipation350W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-274AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
IRG4PSC71UDPBF 的替代選擇
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產品總覽
The IRG4PSC71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
- Creepage distance increased to 5.35mm
- High efficiency
- Maximum power density
- Optimized for specific application conditions
- HEXFRED™ diodes optimized for performance with IGBTs
應用
Alternative Energy, Power Management, Maintenance & Repair, Motor Drive & Control
技術規格
Continuous Collector Current
85A
Power Dissipation
350W
Transistor Case Style
TO-274AA
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
1.95V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.006804