列印頁面
IRL3705NPBF
Power MOSFET, N Channel, 55 V, 77 A, 0.01 ohm, TO-220AB, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
887 有存貨
1,000 即日起您可預購補貨
887 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$84.920 |
| 10+ | NT$41.150 |
| 100+ | NT$36.890 |
| 500+ | NT$29.380 |
| 1000+ | NT$29.340 |
| 5000+ | NT$28.760 |
價格Each
最少: 1
多項: 1
NT$84.92
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRL3705NPBF复制
製造商標準前置時間28 週
訂購代碼8651019
其他名稱SP001578520
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id77A
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- Single N-channel HEXFET® power MOSFET
- Advanced process technology
- Logic level gate drive
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- High-current carrying capability package (up to 195A, die-size dependent)
- Capable of being wave-soldered
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
77A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
IRL3705NPBF 的替代選擇
找到 1 個產品
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002