
產品訊息
產品總覽
The IRLI520NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.
- Logic level gate drive
- Advanced process technology
- Isolated package
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Logic level
應用
Commercial, Industrial, Power Management
技術規格
N Channel
7.7A
TO-220FP
10V
27W
175°C
-
100V
0.18ohm
Through Hole
2V
3Pins
-
技術文件 (1)
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法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
