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IRLML2060TRPBF
MOSFET, N CH, 60V, 1.2A, SOT-23
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| 數量 | 價格 |
|---|---|
| 5+ | NT$13.070 |
| 10+ | NT$7.020 |
| 100+ | NT$4.820 |
| 500+ | NT$3.540 |
| 1000+ | NT$2.550 |
| 5000+ | NT$1.980 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$65.35
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRLML2060TRPBF
訂購代碼1791578
其他名稱SP001578644
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.2A
Drain Source On State Resistance0.48ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques.
- Industry-standard pinout
- MSL1, Consumer qualification
- Environment-friendly
- Increased reliability
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.48ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000008