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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$15.780 | NT$78.90 |
| 總計 價格 | NT$78.90 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$15.780 |
| 10+ | NT$9.050 |
| 100+ | NT$6.120 |
| 500+ | NT$4.580 |
| 1000+ | NT$3.140 |
| 5000+ | NT$2.420 |
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產品訊息
製造商INFINEON
製造商產品編號IRLML5103TRPBF
訂購代碼
複捲式1463265RL
條帶式包裝1463265
其他名稱SP001572946
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id600mA
Drain Source On State Resistance0.6ohm
Transistor Case StyleµSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation540mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
- Generation V technology
- Low profile (<lt/>1.1mm)
- Fast switching
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Fully avalanche rating
- Halogen-free
應用
Power Management, Portable Devices, Computers & Computer Peripherals, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
600mA
Transistor Case Style
µSOIC
Rds(on) Test Voltage
10V
Power Dissipation
540mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
IRLML5103TRPBF 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.13

