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IRLS4030-7PPBF
Power MOSFET, N Channel, 100 V, 110 A, 3900 µohm, TO-263 (D2PAK), Surface Mount
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可供訂購
製造商標準交貨時間：14 週
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| 數量 | 價格 |
|---|---|
| 1+ | NT$238.060 |
| 10+ | NT$148.660 |
| 100+ | NT$123.950 |
| 500+ | NT$111.700 |
| 1000+ | NT$105.820 |
價格Each
最少: 1
多項: 1
NT$238.06
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRLS4030-7PPBF复制
製造商標準前置時間14 週
訂購代碼1698313
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id110A
Drain Source On State Resistance3900µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max2.5V
Power Dissipation370W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The IRLS4030-7PPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Very low RDS (ON) at 4.5V VGS
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Logic level
應用
Power Management, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
110A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
4.5V
Power Dissipation
370W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
3900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
IRLS4030-7PPBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.00143