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IRLU3915PBF
Power MOSFET, N Channel, 55 V, 30 A, 0.014 ohm, TO-251AA, Through Hole
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRLU3915PBF复制
訂購代碼8660336
其他名稱SP001578942
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id30A
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
IRLU3915PBF 的替代選擇
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產品總覽
The IRLU3915PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Ultra-low ON-resistance
- Repetitive avalanche allowed up to Tjmax
- Dynamic dV/dt rating
- Fully avalanche rating
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
120W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
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產品合規憑證
重量 (公斤)：.0004