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IRLU7843PBF
Power MOSFET, N Channel, 30 V, 161 A, 3300 µohm, TO-251AA, Through Hole
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不再生產
產品訊息
製造商INFINEON
製造商產品編號IRLU7843PBF复制
訂購代碼1013426
其他名稱SP001578952
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id161A
Drain Source On State Resistance3300µohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
IRLU7843PBF 的替代選擇
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產品總覽
The IRLU7843PBF is a HEXFET® single N-channel Power MOSFET offers ultra-low gate impedance, fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converter with synchronous rectification.
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
- Logic level
應用
Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
161A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.007257